A +32 dBm 1.85 GHz class-D outphasing RF PA in 130nm CMOS for WCDMA/LTE

Abstract

This paper presents a Class-D outphasing RF Power Amplifier (PA) which can operate at a 5.5V supply and deliver +32dBm at 1.85 GHz in a standard 130nm CMOS technology. The PA utilizes four on-chip transformers to combine the outputs of eight Class-D stages. The Class-D stages utilize a cascode configuration, driven by an AC-coupled low-voltage driver… (More)

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Cite this paper

@article{Fritzin2011AD, title={A +32 dBm 1.85 GHz class-D outphasing RF PA in 130nm CMOS for WCDMA/LTE}, author={Jonas Fritzin and Christer Svensson and Atila Alvandpour}, journal={2011 Proceedings of the ESSCIRC (ESSCIRC)}, year={2011}, pages={127-130} }