A width-dependent body-voltage model to obtain body resistance in PD SOI MOSFET technology

Abstract

A new width-dependent nonlinear relation to obtain body voltage (VB) in PD SOI MOSFET is presented. The new model is extracted based on the distributed nature of the body resistance (RB). Using 3-D simulations of an H-gate 45 nm PD SOI MOSFET, the body voltage variations along the device width were obtained. It was shown that the nonlinear relation… (More)

Topics

6 Figures and Tables