A wideband monolithically integrated photonic receiver in 0.25-µm SiGe:C BiCMOS technology

@article{Eissa2016AWM,
  title={A wideband monolithically integrated photonic receiver in 0.25-µm SiGe:C BiCMOS technology},
  author={M. H. Eissa and Ahmed Awny and G. Winzer and M. Kroh and Stefan Lischke and D. Knoll and Lars Zimmermann and Dietmar Kissinger and Ahmet Cagri Ulusoy},
  journal={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference},
  year={2016},
  pages={487-490}
}
This work presents a 54 Gb/s monolithically integrated silicon photonics receiver (Rx). A germanium photodiode (Ge-PD) is monolithically integrated with a transimpedance amplifier (TIA) and low frequency feedback loop to compensate for the DC input overload current. Bandwidth enhancement techniques are used to extend the bandwidth compared to previously… CONTINUE READING