A vertically isolated self-aligned transistor—VIST

@article{Takemoto1982AVI,
  title={A vertically isolated self-aligned transistor—VIST},
  author={Toyoki Takemoto and Takao Fujita and K. Kawakita and Hiroshi Sakai},
  journal={IEEE Transactions on Electron Devices},
  year={1982},
  volume={29},
  pages={1761-1765}
}
A vertically isolated self-aligned transistor (VIST) has been developed to make possible high-speed low-power dissipation bipolar devices suitable for LSI. This VIST consists of a bird's beak free oxide isolated structure and a high impurity density inactive base self-aligned to the polysilicon emitter. A flat emitter transistor with a self-aligned base is developed by forming an inactive high impurity density base region with an ion-implantation method using a polysilicon emitter as a mask… CONTINUE READING