A vertical cavity light emitting InGaN quantum well heterostructure

@inproceedings{Song1999AVC,
  title={A vertical cavity light emitting InGaN quantum well heterostructure},
  author={Yang Song and Hongjuan Zhou and M. Diagne and Ilker Ozden and A. P. Vertikov and Arto V. Nurmikko and Carrie Carter-Coman and Richard Scott Kern and Fred A. Kish and Michael R. Krames},
  year={1999}
}
A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exceeding 600 in initial experiments, suggesting that the approach can be useful for blue and near ultraviolet resonant cavity… CONTINUE READING

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