A ug 2 00 0 Annealing of radiation induced defects in silicon in a simplified phenomenological model

Abstract

The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement… (More)

Topics

  • Presentations referencing similar topics