A trapping mechanism for autodoping in silicon epitaxy—I. Theory

Abstract

An improved dopant incorporation model based on the trapping of surface adsorbed dopant atoms is described. The model is represented by a first-order differential equation and is characterized by three reactor-dependent parameters. The density of dopant atoms (N_{A}^{0}) adsorbed on the substrate surface just before epitaxial deposition is directly related… (More)

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