A transient analysis method to characterize the trap vertical location in nitride-trapping devices

@article{Lue2004ATA,
  title={A transient analysis method to characterize the trap vertical location in nitride-trapping devices},
  author={Hang-Ting Lue and Yen-Hao Shih and Kuang-Yeu Hsieh and Rich Liu and Chih-Yuan Lu},
  journal={IEEE Electron Device Letters},
  year={2004},
  volume={25},
  pages={816-818}
}
A new method to probe the trap vertical location for nitride-trapping devices is proposed. This method requires only measuring the time dependence of gate injection at various gate voltages on a single wafer. The transient current (J) and the instantaneous electric field (E) across the top oxide can be directly obtained based on various cases of trap location. Comparisons can be made to check which case has the best consistency for the J versus E behaviors. The only assumption in this method is… CONTINUE READING
Highly Cited
This paper has 37 citations. REVIEW CITATIONS

From This Paper

Figures, tables, and topics from this paper.
21 Citations
5 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 21 extracted citations

References

Publications referenced by this paper.
Showing 1-5 of 5 references

On the go with SONOS

  • M. White
  • Proc. IEEE Circuits Designs Conf., 2000, pp. 22…
  • 2000
Highly Influential
6 Excerpts

Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidation

  • E. Suzuki, Y. Hayashi, K. Ishii, T. Tsuchiya
  • Appl. Phys. Lett., vol. 42, pp. 608–610, 1983.
  • 1983
Highly Influential
4 Excerpts

Similar Papers

Loading similar papers…