A three stage, fully differential D-band power amplifier

This paper describes a 3-stage, fully differential D-band power amplifier (PA) using 0.13 μm SiGe BiCMOS technology. The fully differential common emitter (CE) configuration is adopted. The PA consists of baluns used as power splitter and combiner respectively and two simple L-type inter-stage impedance matching networks. The simulation results show that… CONTINUE READING