A thermal spike model of grain growth under irradiation

  title={A thermal spike model of grain growth under irradiation},
  author={Djamel Kaoumi and Arthur T. Motta and Robert C. Birtcher},
  journal={Journal of Applied Physics},
The experimental study of grain growth in nanocrystalline metallic foils under ion irradiation showed the existence of a low-temperature regime (below about 0.15–0.22Tm), where grain growth is independent of the irradiation temperature, and a thermally assisted regime where grain growth is enhanced with increasing irradiation temperature. A model is proposed to describe grain growth under irradiation in the temperature-independent regime, based on the direct impact of the thermal spikes on… 

Grain growth of nanocrystalline 3C-SiC under Au ion irradiation at elevated temperatures

Nanocrystalline silicon carbide (SiC) represents an excellent model system for a fundamental study of interfacial (grain boundary) processes under nuclear radiation, which are critical to the

Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries.

Reducing the grain boundary energy reduced the effectiveness of the grain boundaries as sinks, and the number of defects in the doped material is higher than in undoped (La-free) YSZ, suggesting a different growth mechanism as compared to thermal growth.

Grain growth stagnation and texture development in an irradiated thermally stabilized nanocrystalline alloy

Nanocrystalline metals are of strong interest in nuclear material applications because their grain boundaries may act as effective recombination sites for point defects. Consequently, they may be

The effect of electronic energy loss on irradiation-induced grain growth in nanocrystalline oxides.

The additive effect from both electronic excitation and atomic collision cascades on grain growth demonstrated in this work opens up new possibilities for controlling grain sizes to improve functionality of nanocrystalline materials.

Unraveling irradiation induced grain growth with in situ transmission electron microscopy and coordinated modeling

Nanostructuring has been proposed as a method to enhance radiation tolerance, but many metallic systems are rejected due to significant concerns regarding long term grain boundary and interface



Thermal-spike treatment of ion-induced grain growth: Theory and experimental comparison.

  • AlexanderWas
  • Physics
    Physical review. B, Condensed matter
  • 1993
The model was evaluated with respect to data from two previously published ion-induced grain-growth experiments on elemental and coevaporated alloy films and the value of the proportionality constant [beta] relating the cohesive energy to the activation energy for grain growth was determined.

Temperature effect on ion‐irradiation‐induced grain growth in Cu thin films

The average grain size in Ar+‐irradiated Cu films at room temperature increases with ion dose, following a relationship of d3.3−d3.30 =Kφ. For Ar+ and Xe++ irradiations, the grain growth kinetics are

Grain Growth in Nanocrystalline Metal Thin Films under

In-situ observations in a transmission electron microscope TEM were used to study the microstructure evolution in metal Zr, Pt, Cu, and Au nanocrystalline thin films under ion-beam irradiation.

Ion irradiation induced grain growth in Pd polycrystalline thin films

Ion irradiation induced grain growth in Pd polycrystalline thin films was studied by transmission electron microscopy for 100‐keV Ne+, 185‐keV Ar+, and 560‐keV Xe++ irradiations over a wide range of

Ion‐bombardment‐enhanced grain growth in germanium, silicon, and gold thin films

Grain growth has been studied in polycrystalline thin films of Ge, Si, and Au during ion bombardment. The phenomenon has been characterized by varying the ion dose, ion energy, ion flux, ion species,

The heat-of-mixing effect on ion-induced grain growth

Irradiation experiments were conducted on multilayer (ML) and coevaporated (CO) thin films in order to examine the role that the heat‐of‐mixing (ΔHmix) has in ion‐induced grain growth.