A temperature dependent large-signal drain current neural model for the dual-gate MESFET

Abstract

In this paper, we present a temperature dependent large-signal drain current neural network model for the dual-gate MESFET. We have modeled an on-wafer symmetric 6/spl times/100 /spl mu/m dual gate MESFET manufactured by Nortel Networks. The measurements of the drain current were taken in a wide range of DC bias points (for V/sub gs1/, V/sub gs2/ and V/sub… (More)

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