A technique for fabricating low voltage charge-coupled mosfet with 0.9UM pitch size

The low voltage Charge-Coupled MOSFET with deep-submicron technology is fabricated with extra thick trench oxide process. The extra process module consists of thick oxide growth in trench, resist coating, resist expose to control thick oxide height in trench which would finally affect the break down voltage of the device. The effects of trench length… CONTINUE READING