A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory

@article{Kodama1991ASS,
  title={A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory},
  author={N. Kodama and K.-i. Oyama and Hiroki Shirai and K. Saitoh and Takeshi Okazawa and Yasuaki Hokari},
  journal={International Electron Devices Meeting 1991 [Technical Digest]},
  year={1991},
  pages={303-306}
}
  • N. Kodama, K. Oyama, +3 authors Y. Hokari
  • Published 8 December 1991
  • Materials Science
  • International Electron Devices Meeting 1991 [Technical Digest]
A 0.4- mu m stacked gate cell for a 64-Mb flash memory has been developed which has the symmetrical side wall diffusion self-aligned (SSW-DSA) structure. Using the proposed SSW-DSA cell with p/sup +/ pockets at both the drain and the source, an adequate punchthrough resistance to scale the gate length down to sub-half-micron has been obtained. It is also demonstrated that the uniform erasing scheme applying negative bias to the gate which is adopted for the SSW-DSA cell shows lower trapped… 

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