• DOI:10.1109/IEDM.1991.235443
• Corpus ID: 111203629

A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory

@article{Kodama1991ASS,
  title={A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory},
  author={N. Kodama and K.-i. Oyama and Hiroki Shirai and K. Saitoh and Takeshi Okazawa and Yasuaki Hokari},
  journal={International Electron Devices Meeting 1991 [Technical Digest]},
  year={1991},
  pages={303-306}
}

• N. Kodama, K. Oyama, +3 authors Y. Hokari
• Published 8 December 1991
• Engineering
• International Electron Devices Meeting 1991 [Technical Digest]

A 0.4- mu m stacked gate cell for a 64-Mb flash memory has been developed which has the symmetrical side wall diffusion self-aligned (SSW-DSA) structure. Using the proposed SSW-DSA cell with p/sup +/ pockets at both the drain and the source, an adequate punchthrough resistance to scale the gate length down to sub-half-micron has been obtained. It is also demonstrated that the uniform erasing scheme applying negative bias to the gate which is adopted for the SSW-DSA cell shows lower trapped charges after write/erase (W/E) cycles evaluated by a charge pumping technique, and results in better endurance and retention characteristics than nonuniform erasing schemes. This cell will enable the realization of a 64-Mb flash memory with single 5-V supply operation, 10/sup 6/ W/E endurance, and sector erasing scheme.<<ETX>>