A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory

@article{Kodama1991ASS,
  title={A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory},
  author={Noriaki Kodama and K. Oyama and H. Shirai and K. Saitoh and T. Okazawa and Y. Hokari},
  journal={International Electron Devices Meeting 1991 [Technical Digest]},
  year={1991},
  pages={303-306}
}
  • Noriaki Kodama, K. Oyama, +3 authors Y. Hokari
  • Published 1991
  • Materials Science
  • International Electron Devices Meeting 1991 [Technical Digest]
  • A 0.4- mu m stacked gate cell for a 64-Mb flash memory has been developed which has the symmetrical side wall diffusion self-aligned (SSW-DSA) structure. Using the proposed SSW-DSA cell with p/sup +/ pockets at both the drain and the source, an adequate punchthrough resistance to scale the gate length down to sub-half-micron has been obtained. It is also demonstrated that the uniform erasing scheme applying negative bias to the gate which is adopted for the SSW-DSA cell shows lower trapped… CONTINUE READING
    7 Citations

    Tables from this paper

    A 5-V-only 16-Mb flash memory with sector erase mode
    • 29
    A novel erasing technology for 3.3 V flash memory with 64 Mb capacity and beyond
    • 20
    Effect of substrate bias on the performance and reliability of the split-gate source-side injected flash memory
    • 5
    The outlook of flash EPROM technology
    • S. Lai
    • Computer Science
    • 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers
    • 1993