A super self-aligned source/drain MOSFET

Abstract

A novel MOSFET structure is presented in which the source/drain area is minimized by self-aligning to the gate polysilicon. This is achieved by forming a nitride spacer followed by a second field oxidation after gate delineation. A selective silicon growth technique is used to extend the source/drain over the second field oxide for easy contacting. A fully… (More)

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