A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes

Abstract

SiC power devices generally operate with fast switching. The fast switching operation in power conversion circuits suffer from the self turn-on phenomenon of a power MOSFET in which the gate voltage is induced to fluctuate by the turn-on operation of the MOSFET on the other side in the bridge circuit. The self turn-on results in a large power loss, when the… (More)
DOI: 10.1587/elex.11.20140350

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Cite this paper

@article{Funaki2014ASO, title={A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes}, author={Tsuyoshi Funaki}, journal={IEICE Electronic Express}, year={2014}, volume={11}, pages={20140350} }