A study on power device loss of DC-DC buck converter with SiC schottky barrier diode

@article{Sekikawa2010ASO,
  title={A study on power device loss of DC-DC buck converter with SiC schottky barrier diode},
  author={Munehisa Sekikawa and Tsuyoshi Funaki and Takashi Hikihara},
  journal={The 2010 International Power Electronics Conference - ECCE ASIA -},
  year={2010},
  pages={1941-1945}
}
Silicon carbide (SiC) is an expected candidate as a material for the next generation power semiconductor devices. In this paper, the authors evaluate the power device loss of a DC-DC buck converter, where the silicon (Si) free wheeling diode is replaced with an SiC schottky barrier diode (SBD). The loss reduction of the DC-DC buck converter is discussed… CONTINUE READING