A study on global and local optimization techniques for TCAD analysis tasks

@article{Binder2004ASO,
  title={A study on global and local optimization techniques for TCAD analysis tasks},
  author={Thomas Binder and Clemens Heitzinger and Siegfried Selberherr},
  journal={IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems},
  year={2004},
  volume={23},
  pages={814-822}
}
We evaluate optimization techniques to reduce the necessary user interaction for inverse modeling applications as they are used in the technology computer-aided design field. Four optimization strategies are compared. Two well-known global optimization methods, simulated annealing and genetic optimization, a local gradient-based optimization strategy, and a combination of a local and a global method. We rate the applicability of each method in terms of the minimal achievable target value for a… CONTINUE READING

Citations

Publications citing this paper.
Showing 1-10 of 13 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 25 references

An extensible TCAD optimization framework combining gradient based and genetic optimizers,

  • C. Heitzinger, S. Selberherr
  • presented at the Proc. Int. Symp. Microelectron…
  • 2000
Highly Influential
5 Excerpts

GAlib a C++ Library of Genetic Algorithm Components

  • M. Wall
  • Mass. Inst. of Technol., Cambridge. [Online…
  • 2000
2 Excerpts

Hydrodynamic mixed-mode simulation,

  • T. Grasser, V. Palankovski, G. Schrom, S. Selberherr
  • in Proc. Simul. Semiconduct. Process. Devices,
  • 1998
2 Excerpts

Implan - tation and transient B diffusion in Si : The source of interstitials

  • P. A. Stolk, H. J. Gossmann, J. M. Poate
  • J . Appl . Phys .
  • 1998

Simulation of clustering and transient enhanced diffusion of boron in silicon,

  • M. Uematsu
  • J. Appl. Phys., vol. 84,
  • 1998
1 Excerpt

and M

  • T. Binder, K. Dragosits, +8 authors S. Selberherr
  • Stockinger.
  • 1998
1 Excerpt

Gossmann, “Simulation of cluster evaporation and transient enhanced diffusion in silicon,

  • C. S. Rafferty, G. H. Gilmer, J. Jaraiz, D. Eaglesham, H.-J
  • Appl. Phys. Lett., vol. 68,
  • 1996
2 Excerpts

Similar Papers

Loading similar papers…