A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

@article{Chen2012ASO,
  title={A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator},
  author={Gang Chen and Jerry Yu and P. T. Lai},
  journal={Microelectronics Reliability},
  year={2012},
  volume={52},
  pages={1660-1664}
}

From This Paper

Topics from this paper.

Citations

Publications citing this paper.

Similar Papers

Loading similar papers…