A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

@article{Kundys2016ASO,
  title={A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates},
  author={Dmytro Kundys and Danny Sutherland and Matthew John Davies and Fabrice Oehler and James T. Griffiths and Phil Dawson and Menno J. Kappers and C. Humphreys and Stefan Schulz and Fengzai Tang and Rachel A. Oliver},
  journal={Science and Technology of Advanced Materials},
  year={2016},
  volume={17},
  pages={736 - 743}
}
Abstract We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ( ) a-plane and ( ) m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are broad with full width at half maximum height increasing from 81 to 330 meV as the In fraction increases… 

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