A study of the nitridation process on GaAs (001) surface by rf-N plasma irradiation

@inproceedings{Sugiyama1997ASO,
  title={A study of the nitridation process on GaAs (001) surface by rf-N plasma irradiation},
  author={Hiroki Sugiyama and Masanori Shinohara and Kazumi Wada},
  year={1997}
}
The nitridation process of a GaAs (001) surface caused by N-radical irradiation is studied. In the nucleation stage, the adsorption of N atoms is observed by scanning tunneling microscopy. Hexagonal GaN, whose [1120] axis aligns parallel to the [110] of GaAs substrates, is formed by excess Ga atoms generated by a higher As desorption rate. When nitridation proceeds toward the subsurface region due to the replacement of As atoms with N atoms, cubic GaN is formed. The stoichiometries of the… CONTINUE READING