A study of the deep electron traps in semiconducting CdS

@inproceedings{Grill1979ASO,
  title={A study of the deep electron traps in semiconducting CdS},
  author={C. Grill and Gautier Bastide and Georges Sagnes and M. Rouzeyre},
  year={1979}
}
Deep‐level transient spectroscopy by means of capacitance transients has been applied to study the characteristics of deep electron traps in low‐resistivity CdS. Thermal activation of the capacitance transients for Schottky barriers formed on three different single crystals indicates the presence of nine electron traps located between 210 and 730 meV from the conduction band. Measured trap concentrations range from low 1011 to high 1014 cm−3. Among the nine detected electron traps there is one… CONTINUE READING