A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration

@article{Chen1987ASI,
  title={A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration},
  author={Tanggui Chen and Y. H. Zhuang and Bichiau Chang and Mi-rŭk Yi and Amnon Yariv},
  journal={IEEE Electron Device Letters},
  year={1987},
  volume={8},
  pages={191-193}
}
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (Ic> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration. 

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