• DOI:10.1088/0957-4484/22/25/254006
• Corpus ID: 18114067

A stacked memory device on logic 3D technology for ultra-high-density data storage

@article{Kim2011ASM,
  title={A stacked memory device on logic 3D technology for ultra-high-density data storage},
  author={Jiyoung Kim and Augustin Hong and Sung Min Kim and Kyeong-Sik Shin and Emil B. Song and Yongha Hwang and Faxian Xiu and Kosmas Galatsis and Chi On Chui and Rob N. Candler and Siyoung Choi and Joo-tae Moon and Kang L. Wang},
  journal={Nanotechnology},
  year={2011},
  volume={22},
  pages={254006}
}

• Jiyoung Kim, A. Hong, +10 authors Kang L. Wang
• Published 24 June 2011
• Computer Science
• Nanotechnology

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.