A soft threshold lucky electron model for efficient and accurate numerical device simulation

@inproceedings{Jungemann1996AST,
  title={A soft threshold lucky electron model for efficient and accurate numerical device simulation},
  author={C. Jungemann and R. K. R. Thoma and Walter L. Engl},
  year={1996}
}
Abstract Starting from Boltzmann's transport equation utilizing Shockley's idea for lucky electrons, a generalized expression of the impact ionization generation rate for numerical device simulation is found. The derivation from Boltzmann's transport equation for inhomogeneous systems provides a solid basis for the physical and mathematical fromulation and removes the ambiguity of former heruistic approaches. The new model allows the incorporation of different band structures and impact… CONTINUE READING

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