## Analysis of high frequency effects in the intrinsic part of nano-metre scale MOS devices in millimeter wave band

- J. Yavand Hasani, Mahmoud Kamarei, Fabien Ndagijimana
- 2009 First Conference on Millimeter-Wave and…
- 2009

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@article{AbouAllam1997ASM, title={A small-signal MOSFET model for radio frequency IC applications}, author={Eyad Abou-Allam and Tajinder Manku}, journal={IEEE Trans. on CAD of Integrated Circuits and Systems}, year={1997}, volume={16}, pages={437-447} }

- Published 1997 in IEEE Trans. on CAD of Integrated Circuits and…
DOI:10.1109/43.631207

In this paper, we present a small-signal model for an integrated MOS transistor which takes into account the distributed nature of the gate structure. The y parameters are derived, as well as an equation for an equivalent current noise source at the output. The equivalent current noise source takes into account the thermal noise generated by the resistive gate. The modeling equations are of relatively simple form, allowing for easy implementation into a circuit simulation CAD tool. The model is… CONTINUE READING

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