A simulation model for the density of states and for incomplete ionization in crystalline silicon . II . Investigation of Si : As and Si : B and usage in device simulation

@inproceedings{Altermatta2006ASM,
  title={A simulation model for the density of states and for incomplete ionization in crystalline silicon . II . Investigation of Si : As and Si : B and usage in device simulation},
  author={P. P. Altermatta},
  year={2006}
}
  • P. P. Altermatta
  • Published 2006
A parametrization of the density of states DOS near the band edge of phosphorus-doped crystalline silicon is derived from photoluminescence and conductance measurements, using a recently developed theory of band gap narrowing. It is shown that the dopant band only “touches” the conduction band at the Mott metal-insulator transition and that it merges with the conduction band at considerably higher dopant densities. This resolves well-known contradictions between conclusions drawn from various… CONTINUE READING
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