A simple test for ideal memristors

@article{Pershin2018AST,
  title={A simple test for ideal memristors},
  author={Y. Pershin and M. Ventra},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2018}
}
An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is $V(t)=R_M(q)I(t)$. It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I-V curves. However, a pinched I-V hysteresis loop is not a definitive test of whether a resistor with memory is truly an ideal memristor… Expand

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