A simple test for ideal memristors

@article{Pershin2018AST,
  title={A simple test for ideal memristors},
  author={Yuriy V. Pershin and Massimiliano Di Ventra},
  journal={Journal of Physics D: Applied Physics},
  year={2018},
  volume={52}
}
An ideal memristor is defined as a resistor with memory that, when subjected to a time-dependent current, , its resistance RM(q) depends only on the charge q that has flowed through it, so that its voltage response is . It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I– curves. However, a pinched I– hysteresis loop is not a definitive test of whether a resistor with memory is truly an ideal memristor because such a property is shared… 
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References

SHOWING 1-10 OF 32 REFERENCES
The missing memristor found
TLDR
It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Memristive devices and systems
A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are
Fundamental Issues and Problems in the Realization of Memristors
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film
On the physical properties of memristive, memcapacitive and meminductive systems
TLDR
It is shown that ideal memristors, namely those whose state depends only on the charge that flows through them (or on the history of the voltage), are subject to very strict physical conditions and are unable to protect their memory state against the unavoidable fluctuations, and therefore are susceptible to a stochastic catastrophe.
Three Fingerprints of Memristor
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched
Memristor-The missing circuit element
A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-
Memresistors and non-memristive zero-crossing hysteresis curves
It has been erroneously asserted by the circuit theorist Leon Chua that all zero-crossing pinched hysteresis curves define memristors. This claim has been used by Stan Williams of HPLabs to assert
Reply to comment on ‘If it’s pinched it’s a memristor’
  • L. Chua
  • Art
    Handbook of Memristor Networks
  • 2019
TLDR
This chapter gives a circuit-theoretic foundation for the first four elementary nonlinear 2-terminal circuit elements, namely, the resistor, the capacitor, the inductor, and the memristor.
Memristive model of amoeba learning.
TLDR
It is shown that the amoebalike cell Physarum polycephalum when exposed to a pattern of periodic environmental changes learns and adapts its behavior in anticipation of the next stimulus to come and is useful to better understand the origins of primitive intelligence.
Memory effects in complex materials and nanoscale systems
TLDR
The memory properties of various materials and systems which appear most strikingly in their non-trivial, time-dependent resistive, capacitative and inductive characteristics are described within the framework of memristors, memcapacitors and meminductors.
...
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