A simple technique for obtaining (1120) or (1010) textured ZnO films by RF bias sputtering

Abstract

C-axis parallel-oriented ZnO piezoelectric films, (1120) or (1010) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (1120) or (1010) orientation. This is because the most densely packed… (More)

Topics

8 Figures and Tables

Cite this paper

@article{Takayanagi2010AST, title={A simple technique for obtaining (1120) or (1010) textured ZnO films by RF bias sputtering}, author={Shinji Takayanagi and Takahiko Yanagitani and Mami Matsukawa and Yoshiaki Watanabe}, journal={2010 IEEE International Ultrasonics Symposium}, year={2010}, pages={1060-1063} }