A simple semi-analytical parameter extraction method for 40nm gatelength MOSFET

  title={A simple semi-analytical parameter extraction method for 40nm gatelength MOSFET},
  author={Panpan Yu and Ying Zhou and Ling Sun and Jianjun Gao},
  journal={2015 IEEE 11th International Conference on ASIC (ASICON)},
A simple and accurate small-signal model for 40 nm gatelength MOSFET device is proposed in this paper. Semi-analytical extraction method is performed by S-parameter analysis based on the proposed equivalent circuit of MOSFET for high-frequency operation. Simulated and measured results of 40 nm MOSFET with a 5×0.04×4 μm gatewidth (unit gate width × unit gate length × number of gate finger) are compared and good agreement has been obtained up to 40GHz. 


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