A simple semi-analytical parameter extraction method for 40nm gatelength MOSFET

@article{Yu2015ASS,
  title={A simple semi-analytical parameter extraction method for 40nm gatelength MOSFET},
  author={Panpan Yu and Ying Zhou and Ling Sun and Jianjun Gao},
  journal={2015 IEEE 11th International Conference on ASIC (ASICON)},
  year={2015},
  pages={1-4}
}
A simple and accurate small-signal model for 40 nm gatelength MOSFET device is proposed in this paper. Semi-analytical extraction method is performed by S-parameter analysis based on the proposed equivalent circuit of MOSFET for high-frequency operation. Simulated and measured results of 40 nm MOSFET with a 5×0.04×4 μm gatewidth (unit gate width × unit gate length × number of gate finger) are compared and good agreement has been obtained up to 40GHz. 

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References

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Showing 1-6 of 6 references

IEEE Transaction on Microwave and Techniques

  • S. Lee, H. K. Yu
  • 48, p. 412-416
  • 2000
Highly Influential
4 Excerpts

IEEE Transactions on Electron Devices

  • Y. Cheng, M. J. Deen, C. Chen
  • 53, p. 1286-1303
  • 2005
2 Excerpts

in Electron Device Tech

  • J. N. Burghartz, M. Hargrove, C. Webster
  • Dig., p. 853-856
  • 2000
2 Excerpts

H

  • J. Ma
  • Liang and D. Ngo, in IEEE Radio Frequency…
  • 1997
2 Excerpts

in Symp

  • E. Morifuji, H. S. Momose, T. Ohguro
  • VLSI Tech.Dig., p.163-164
  • 1990
2 Excerpts

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