A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs

Abstract

We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent… (More)
DOI: 10.1016/j.mejo.2008.06.006

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