A simple model for the overlap capacitance of a VLSI MOS device

Abstract

A simple approximate analytical expression for the overlap capacitance between gate- and source-drain of a VLSI MOS device is derived. The expression takes into account finite polysilicon gate thickness, source-drain junction depth and different dielectric constants of silicon and oxide. A numerical procedure is also described to calculate the exact overlap… (More)

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@article{Shrivastava1982ASM, title={A simple model for the overlap capacitance of a VLSI MOS device}, author={Ramakant Shrivastava and K. Fitzpatrick}, journal={IEEE Transactions on Electron Devices}, year={1982}, volume={29}, pages={1870-1875} }