A simple method for calculation of the bulk modulus of boron-doped diamond

  • Dr. V. Katsika-Tsigourakou
  • Published 2012

Abstract

Boron-doped diamond undergoes an insulator-metal transition at some critical value (around 2.21 at %) of the dopand concentration. Here, we report a simple method for the calculation of its bulk modulus, based on the thermodynamical model, by Varotsos and Alexopoulos, that has been originally suggested for the interconnection between the defect formation… (More)

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