A simple high-performance low-loss current-source driver for SiC bipolar transistors

Abstract

The paper proposes a novel topology of a simple base drive unit for silicon carbide bipolar junction transistors (BJTs) based on the current-source principle. Energy stored in a small, air-cored inductor is employed to generate a current peak forcing the BJT to turn-on (10–20ns) very rapidly. The driver enables very high switching performance and very low… (More)

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