A silicon photomultiplier with >30% detection efficiency from 450–750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm CMOS

@article{Webster2012ASP,
  title={A silicon photomultiplier with >30% detection efficiency from 450–750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm CMOS},
  author={E. Webster and R. Walker and R. Henderson and L. Grant},
  journal={2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)},
  year={2012},
  pages={238-241}
}
  • E. Webster, R. Walker, +1 author L. Grant
  • Published 2012
  • Materials Science, Computer Science
  • 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
A 16×16 Silicon Photomultiplier (SiPM) is reported in a 130nm CMOS imaging technology with a photon detection probability of >;30% from 450-750nm. The SiPM demonstrates a 21.6% fill factor with an 11.6μm pitch and 8μm diameter SinglePhoton Avalanche Diodes (SPADs). This is achieved using a new SPAD structure with integrated resistor and capacitor. NMOS-only pixel electronics are used to improve fill factor and to implement an addressable array of SPADs that are isolated from the array and… Expand
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