A silicon NMOS monolithically integrated optical receiver

Abstract

We report a silicon p-i-n/NMOS monolithically integrated optical receiver. The p-i-n photodiode is a planar interdigitated structure that has exhibited a dark current of 1.3 pA at 5 V and quantum efficiencies of 84 and 74% at 800 and 870 nm, respectively. Both depletion- and enhancement-mode MOSFET's are used in the preamplifier; the effective channel… (More)

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