A semiconductor under insulator technology in indium phosphide

@article{Mnaymneh2012ASU,
  title={A semiconductor under insulator technology in indium phosphide},
  author={Khaled Mnaymneh and Dan Dalacu and Simon Fr'ed'erick and Jean Lapointe and Philip J. Poole and Robin L. Williams},
  journal={Applied Physics Letters},
  year={2012},
  volume={101},
  pages={151120}
}
This letter introduces a semiconductor-under-insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with… 
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References

SHOWING 1-10 OF 12 REFERENCES

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

The heterogeneous integration of a III–V thin film on top of a silicon-on-insulator (SOI) optical waveguide circuit by means of adhesive divinylsiloxane-benzocyclobutene (DVS-BCB) die-to-wafer

Efficient coupling to W1 photonic crystal waveguide on InP membrane through suspended access guides

Suspended access ridges have been designed and integrated with a single-missing row photonic crystal guide on InP membrane in order to improve the coupling efficiency. This integration provides

Mode conversion in tapered submicron silicon ridge optical waveguides.

It is shown that this kind of mode conversion could be depressed by carefully choosing the tapers parameters (like the taper width, the etching depth, etc), which is important for the applications when low-loss propagation for the TM fundamental mode is needed.

Slow-light-enhanced single quantum dot emission in a unidirectional photonic crystal waveguide

We report the observation of a Purcell enhancement of the in-plane spontaneous emission rates of InAsself-assembledquantum dots coupled to a mode of a unidirectional photonic crystal

Ultrafast photonic crystal nanocavity laser

Spontaneous emission is not inherent to an emitter, but rather depends on its electromagnetic environment. In a microcavity, the spontaneous emission rate can be greatly enhanced compared with that

Enhanced photonic crystal cavity-waveguide coupling using local slow-light engineering.

This Letter introduces an enhanced cavity-waveguide coupling architecture based upon slow-light engineering in a two-port photonic crystal system that may facilitate next-generation planar lightwave circuitry such as onchip quantum information processing or high precision light-matter sensing applications.

Extrinsic optical scattering loss in photonic crystal waveguides: role of fabrication disorder and photon group velocity.

It is reported that loss in photonic crystal waveguides scales inversely with group velocity, at least, thereby raising serious questions about future low-loss applications based on operating frequencies that approach the photonic band edge.

Photonic crystal cavity based gas sensor

We have studied the response of a photonic crystal cavity to changes of the ambient refractive index. Transmission measurements of the cavity under different gaseous environments and pressures showed

Monolithically integrated optical channel monitor for DWDM transmission systems

The design, fabrication, and performance of an InP-based monolithically integrated optical power monitor are presented. It contains 44 wavelength channels separated by 100 GHz and demonstrates record

Deterministic emitter-cavity coupling using a single-site controlled quantum dot

Site-selective epitaxy is used to deterministically control the nucleation site of a single quantum dot. A photonic crystal cavity is fabricated at the dot site for a true single quantum dot-cavity