A semiconductor under insulator technology in indium phosphide

@article{Mnaymneh2012ASU,
  title={A semiconductor under insulator technology in indium phosphide},
  author={Khaled Mnaymneh and Dan Dalacu and Simon Fr'ed'erick and Jean Lapointe and Philip J. Poole and Robin L. Williams},
  journal={Applied Physics Letters},
  year={2012},
  volume={101},
  pages={151120}
}
This letter introduces a semiconductor-under-insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with… 
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Normally, the larger refractive index contrast of silicon-on-insulator (SOI) photonics used for transporting highly confined optical modes is not available in compound semiconductor systems because…

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