A robust Ku-band low noise amplifier using an industrial 0.25-µm AlGaN/GaN on SiC process

@article{Resca2013ARK,
  title={A robust Ku-band low noise amplifier using an industrial 0.25-µm AlGaN/GaN on SiC process},
  author={Davide Resca and Francesco Scappaviva and Corrado Florian and S. Rochette and Jean-Luc Muraro and Valeria di Giacomo Brunel and Christophe Chang and Didier Baglieri},
  journal={2013 European Microwave Integrated Circuit Conference},
  year={2013},
  pages={496-499}
}
Besides the well known outstanding characteristics in terms of power density and thermal behavior, which are largely exploited for microwave high power applications, AlGaN/GaN HEMT technologies have demonstrated promising results for the design of low noise, high-dynamic-range and highly rugged amplifiers. In this paper we describe the design, implementation and characterization of a Ku-band MMIC Low Noise Amplifier for telecom Space applications, exploiting an industrial AlGaN/GaN 0.25 μm HEMT… CONTINUE READING