A ring-HEMT for improved GaN MMIC thermal dissipation

Abstract

A novel GaN HEMT which reduces the junction temperature is presented. The new structure uses a ring-like layout for the gate stripes, aimed at increasing the separation between stripes. Simulation and experimental results indicate improved performance of the Ring-HEMT, stemming from thermal effects and their interaction with device parameters. Compared to a… (More)

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7 Figures and Tables