A review of multiple-valued memory technology
@article{Gulak1998ARO, title={A review of multiple-valued memory technology}, author={P. Gulak}, journal={Proceedings. 1998 28th IEEE International Symposium on Multiple- Valued Logic (Cat. No.98CB36138)}, year={1998}, pages={222-231} }
This paper provides a brief overview of semiconductor memory design from the perspective of the impact multiple-valued circuit techniques are making on modern day implementations. The focus is primarily on CMOS-related technologies.
Figures, Tables, and Topics from this paper
9 Citations
Why M-Valued Circuits are Restricted to a Small Niche
- Computer Science
- J. Multiple Valued Log. Soft Comput.
- 2003
- 8
- PDF
Design of a ternary static memory cell using carbon nanotube-based transistors
- Materials Science
- 2011
- 33
Self-refreshing Multiple Valued Memory
- Computer Science
- 2006 IEEE Design and Diagnostics of Electronic Circuits and systems
- 2006
- 1
References
SHOWING 1-10 OF 28 REFERENCES
A multiple-valued ferroelectric content-addressable memory
- Computer Science
- Proceedings of 26th IEEE International Symposium on Multiple-Valued Logic (ISMVL'96)
- 1996
- 13
- PDF
Design of a one-transistor-cell multiple-valued CAM
- Computer Science
- IEEE Journal of Solid-State Circuits
- 1996
- 28
Functionally separated, multiple-valued content-addressable memory and its applications
- Computer Science
- 1995
- 17
A 4-level storage 4 Gb DRAM
- Engineering
- 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers
- 1997
- 22
- Highly Influential