A punch-through isolated dynamic RAM cell

@article{Taylor1978API,
  title={A punch-through isolated dynamic RAM cell},
  author={G. W. Taylor and P. K. Chatterjee and H.-S. Fu and A 1 Tasch},
  journal={1978 International Electron Devices Meeting},
  year={1978},
  pages={352-355}
}
A novel dynamic RAM Cell concept is introduced. The operation, charge storage mechanism and layout of the cell are similar in essence to the VMOS RAM Cell [1]. The novelty is in the use of a punch-through mechanism to address the cell. This results in a planar cell which may be fabricated using regular NMOS technology. The cell structure has the potential… CONTINUE READING