A proposal of trapezoid mesa trench MOS barrier Schottky rectifier

Abstract

We propose a new structure of Schottky rectifier, named trapezoid mesa trench MOS barrier Schottky rectifier (TM-TMBS). By 2D numerical simulations, both forward and especially better reverse I–V characteristics, including higher breakdown voltage and lower leakage current, were demonstrated and explained comparing to regular TMBS as well as conventional planar Schottky rectifier.

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Cite this paper

@article{Li2010APO, title={A proposal of trapezoid mesa trench MOS barrier Schottky rectifier}, author={Weiyi Li and Guo-Ping Ru and Yu-Long Jiang and Gang Ruan}, journal={2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology}, year={2010}, pages={1789-1791} }