• Materials Science
  • Published 2004

A process for producing a semiconductor structure comprising forming a field effect transistor with a strained channel region

@inproceedings{Frohberg2004APF,
  title={A process for producing a semiconductor structure comprising forming a field effect transistor with a strained channel region},
  author={Kai Frohberg and Joerg Hohage and Hartmut Ruelke},
  year={2004}
}
A method of forming a semiconductor structure comprising: Providing a substrate comprising a first transistor element and a second transistor element; Forming a first strained layer over the first transistor element; Forming a second strained layer above said second transistor element, wherein the second strained layer, the first transistor element not covered; wherein at least one of the first strained layer and the second strained layer having a predetermined intrinsic elastic compression… CONTINUE READING