A pr 2 00 0 Electron Spin Coherence Times in Bulk and Quantum Well Zincblende Semiconductors

@inproceedings{Lau2000AP2,
  title={A pr 2 00 0 Electron Spin Coherence Times in Bulk and Quantum Well Zincblende Semiconductors},
  author={Wayne H. Lau and Jonathon T. Olesberg and Michael E. Flatt{\'e}},
  year={2000}
}
A theory for longitudinal (T 1) and transverse (T 2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Quantitative agreement between these calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.