A poly-Si TFT integrated gate-data line-crossover structure employing an air-gap for large-size AMLCD panel

Abstract

We have fabricated a novel poly-Si TFT integrated at the gate-data line-crossover structure without sacrificing the electrical characteristics. The aperture ratio of the panel was increased considerably because the TFT was located under the opaque metal line. In particular, we employed a low dielectric air-gap between the gate line and data lines, which… (More)

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