A pentacene ambipolar transistor: Experiment and theory

@inproceedings{Schmechel2005APA,
  title={A pentacene ambipolar transistor: Experiment and theory},
  author={Roland Schmechel and Marcus Ahles and Heinz von Seggern},
  year={2005}
}
An ambipolar pentacene transistor with top-gold and top-calcium contacts has been realized by utilizing a parallactic shadow mask effect during vapor deposition. The pentacene deposited on top of a silicon dioxide gate insulator is doped by Ca at the pentacene/SiO2 interface in order to compensate electron traps. An equivalent circuit model based on a resistor-capacitor network has been developed to describe the basic electrical properties of the transistor. Shockley-like analytical expressions… CONTINUE READING

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