A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation

  • Yiming Lia
  • Published 2004

Abstract

We propose in this paper a quantum correction transport model for nanoscale double-gate metal-oxidesemiconductor field effect transistor (MOSFET) device simulation. Based on adaptive finite volume, parallel domain decomposition, monotone iterative, and a posteriori error estimation methods, the model is solved numerically on a PC-based Linux cluster with… (More)

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