A parallel, CT-ΔΣ based ADC for OFDM UWB receivers in 130 nm CMOS

The design and implementation in a 1.2 V, 130 nm CMOS technology of an ADC intended for OFDM UWB signals is described. This ADC is based on parallel, continuous-time ΣΔ modulators, and employs an OFDM-optimized NTF, implemented using a 3rd order lowpass and a 4t order bandpass modulator. Both are CRFB structures which use active-RC integrators. “Early DAC… (More)