A novel technique of silicon-on-nothing MOSFETs fabrication by hydrogen and helium co-implantation

@article{Bu2004ANT,
  title={A novel technique of silicon-on-nothing MOSFETs fabrication by hydrogen and helium co-implantation},
  author={Weihai Bu and R. C. Huang and Ming Fu Li and Yu Tian and Yangyuan Wang},
  journal={Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.},
  year={2004},
  volume={1},
  pages={269-272 vol.1}
}
In this paper a novel technique of silicon-on-nothing (SON) MOSFETs fabrication by H/sup +/ and He/sup +/ co-implantation is presented for the first time. This in-house technique is compatible with conventional CMOS technology and it can greatly alleviate the problems existing in the known techniques of SON devices. SON nMOSFETs with 50nm gate length have been fabricated and demonstrated in this paper. With the same process condition, SON MOSFETs exhibit better performance than the… CONTINUE READING

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A Novel Process of Silicon-on-Nothing MOSFETs with Double Implantation

2007 IEEE International Conference on Integration Technology • 2007
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1. Appl. Phys., 38, p.2294 • 1999
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