A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack

@inproceedings{Wu2003ANS,
  title={A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack},
  author={Ding-zhu Wu and A.-C. Lindgren and Stefan Persson and Gustaf Sj{\"o}blom and Martin von Haartman and Johan Seger and Per-Erik Hellstr{\"o}m and Joergen Olsson and H‐O. Blom and Shi-Li Zhang and Mikael {\"O}stling and Elizaveta Vainonen-Ahlgren and W.-M. Li and Eva Tois and Aulis Tuominen},
  year={2003}
}
Proof-of-concept pMOSFETs with a strained-Si0.7Ge0.3 surface-channel deposited by selective epitaxy and a TiN/Al2O3/HfAIO(x)/Al2O3 gate stack grown by atomic layer chemical vapor deposition (ALD) t ...