A novel self-aligned gate-overlapped LDD poly-Si TFT with high reliability and performance

@article{Hatano1997ANS,
  title={A novel self-aligned gate-overlapped LDD poly-Si TFT with high reliability and performance},
  author={Mutsuko Hatano and Haruo Akimoto and Tsuyoshi Sakai},
  journal={International Electron Devices Meeting. IEDM Technical Digest},
  year={1997},
  pages={523-526}
}
Gate-overlapped LDD poly-Si TFT fabricated by using poly Si-sidewall gates self-alignment process (Sa-GOLD), is proposed. The Sa-GOLD TFTs are suitable for high-speed operation because of small overlapping capacitance and large transconductance. Furthermore, they can reduce the drain electric field, and provide high reliability against drain-avalanche hot-carrier. 
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